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Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN

Identifieur interne : 00C581 ( Main/Repository ); précédent : 00C580; suivant : 00C582

Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN

Auteurs : RBID : Pascal:03-0122994

Descripteurs français

Pascal (Inist)
- 7361E, 7866F, 7765L, 7784B, 7830F, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Couche épitaxique semiconductrice, Spectre Raman, Matériau semiconducteur piézoélectrique, Couche mince piézoélectrique, Densité électron, Méthode Monte Carlo.

English descriptors

KwdEn :
- Electron density, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Monte Carlo methods, Piezoelectric semiconductors, Piezoelectric thin films, Raman spectra, Semiconductor epitaxial layers, Wide band gap semiconductors.

Abstract

Field-induced electron transport in an In_xGa_1-xN (x≅0.6) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Nonequilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In_xGa_1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained. © 2003 American Institute of Physics.

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Pascal:03-0122994

Le document en format XML

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<front><div type="abstract" xml:lang="en">Field-induced electron transport in an In<sub>x</sub>
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Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN

Studies of field-induced nonequilibrium electron transport in an InxGa1-xN (x≅0.6) epilayer grown on GaN

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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